EVG ® 810 LT
EVG 810 LT
LowTemp™ Plasma Activation System。Low-temperature plasma activation system for SOI, MEMS, compound semiconductors and advanced substrate bonding
广西科米瑞实验仪器设备有限公司提供 EV Group EVG 810 LT 产品资料、选型咨询、供货报价和售后服务支持，价格面议。
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说明
LowTemp™ Plasma Activation System
Low-temperature plasma activation system for SOI, MEMS, compound semiconductors and advanced substrate bonding
The EVG810 LT LowTemp™ plasma activation system is a single-chamber, stand-alone unit with manual operation. The process chamber allows for ex-situ processes (wafers are activated one by one and bonded outside the plasma activation chamber). The EVG810 LT system can be combined with EVG's cleaning and bonding systems to enable a manual operation direct bonding process.
Features
Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
Fastest kinetics of any wafer bonding mechanism
No wet processes required
Highest bond strength at low temperature annealing (up to 400 °C)
Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
High degree of materials compatibility (including CMOS)
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