FLEXion 200/400, FLEXion 400-SiC
FLEXion 200/400, FLEXion 400-SiC
Medium current production implanter for:。RF and power devices, sensors, opto-electronics manufacturing
广西科米瑞实验仪器设备有限公司提供 Ion Beam Services FLEXion 200/400, FLEXion 400-SiC 产品资料、选型咨询、供货报价和售后服务支持，价格面议。
← 返回产品列表
说明
Medium current production implanter for:
RF and power devices, sensors, opto-electronics manufacturing
on Si, SiC, GaAs, GaN, LiTaO3
, HgCdTe, LiNbO3
, InP…
FLEXion 200/400, FLEXion 400-SiC
To fulfill manufacturer’s needs for compound Semiconductors
and SiC components, IBS has designed a family of implanters avoiding
the costly complexity of a 300 mm Si machine downgraded for SiC.
High beam current
Extended life ion source ( >300 hrs)
Enhanced single or
multi-charged Al
beam generation
High resolution
analyzer magnet for multi-charged and high AMU beams
650 °C
fast temperature ramp-up/ramp-down platen for SiC
Optimized throughput for
non Si materials
Quad implant, autotune up to 10 chained implantations
From coupons to 200 mm, parallel scanning for 200 mm wafers
Up to 1.2 MeV
High efficiency ion sources (Indirect heated Cathode, ECR)
Up to 8 different implant gases
规格
| 型号 | FLEXion 200/400, FLEXion 400-SiC |
|---|---|
| Application materials | Si, SiC, GaAs, GaN, LiTaO3, HgCdTe, LiNbO3, InP |
| Wafer/sample range | From coupons to 200 mm; parallel scanning for 200 mm wafers |
| Maximum energy | Up to 1.2 MeV |
| SiC platen temperature | 650 °C fast temperature ramp-up/ramp-down platen |
| Ion source life | Extended life ion source (>300 hrs) |
| Implant gases | Up to 8 different implant gases |
FAQ
相关产品
提交需求
请填写必填信息，我们将在工作日尽快回复。