scia Batch 350
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3D-Coatings in Batches
The scia Batch 350 is designed for biocompatible coatings of 3‑dimensional shaped substrates. Thereby, the carrier concept enables different substrate sizes and shapes in one batch. With its stable, reproducible and certified process, the system meets the high quality standards for treatment of medical objects.
Features & Benefits
Coating of different substrate sizes and quantities in batches due to carrier loading
Two independent RF electrodes for high throughput
Homogeneous “all-around coating” by individual rotation of each substrate
Superior barrier performance and fully cohesive film, also during mechanical deformation
Combination of heating, plasma pre-treatment and PECVD coating
Flexible gas and RF conditions
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Applications
Stent for vascular intervention, PRO-Kinetic Energy © BIOTRONIK
3-dimensional barrier coating of biocompatible films for medical implants (pacemakers, stents)
Principle
RF parallel plate arrangement with rotation of each substrate for a uniform coating of all sides
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a plasma assisted reactive process to deposit thin films from a gas state (vapor) into a solid state on a substrate.
Detailled Information
Substrate size
Individual sizes loaded on 2 carriers, carrier size up to 350 mm x 240 mm
Substrate carrier
Water-cooled, pulsed DC bias (2 kV, 400 mA)
| 型号 | scia Batch 350 |
|---|---|
| Product category | Pecvd Rie |
| Substrate size | Individual sizes loaded on 2 carriers, carrier size up to 350 mm x 240 mm |
| Substrate carrier |
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| Water-cooled, pulsed DC bias (2 kV, 400 mA) |
| Plasma source | RF parallel plate arrangement, 13.56 MHz |
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| 电源电压 | RF power max. 2 x 600 W |
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| Electrode setup | Temperature: heating up to 400 °C; distance: adjustable between 50 mm and 150 mm |
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| Operation modes | Independent or coupled electrodes |
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| Base pressure | < 5 x 10 -7 mbar |
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| System dimension (W x D x H) | 0.90 m x 1.70 m x 2.10 m (without electrical rack and pumps) |
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| Configuration | Single chamber with manual loading in batches |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical deposition rate | SiC: 5 nm/min |
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