scia Coat 200
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High Quality Multilayer Deposition
The scia Coat 200 has an excellent uniformity for coatings on up to 200 mm substrates. By using ion beam sputter deposition instead of other deposition processes, smooth and defect-free films can be achieved. In-situ optical monitoring ensures excellent process stability. Additionally, the system enables handling of wafer as well as arbitrary shaped substrates.
Features & Benefits
Excellent uniformity by substrate rotation and tilt
Up to 5 water-cooled target materials on a rotational holder for in-situ change
Recipe-controlled multilayer deposition with quartz crystal oscillator and/or optical thickness monitor (OTM) and test glass changer
Direct wafer handling or adaptation to variable substrate sizes with carrier handling
Equipped with a 350 mm ion beam source as assist source, also usable for ion beam etching processes
Need more Information? Contact us!
Single chamber with cassette handling
Single chamber with single substrate load lock
Applications
Transmittance and reflectivity diagram of a high-reflective mirror. Deposition of quarter-wave stack consisting of tantalum(V)-oxide and silicon dioxide for high-reflective mirror @ 630 nm. Reflectivity > 99.9 % and transmittance 15-20 ppm.
Optical coatings for high- and anti-reflective layers, bandpass and notch filters
Multilayer films for magnetic sensors (GMR, TMR, spintronics)
High laser damage threshold coatings
Deposition of dielectric and metal layers
In-situ preprocessing of substrates (etching, cleaning, smoothing)
Application Note
Dielectric Coatings on large substrates
High- and Anti-Reflective Coatings with Ta 2 O 5 and SiO 2
| 型号 | scia Coat 200 |
|---|---|
| Product category |
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| Ion Beam Sputtering |
| Substrate size (up to) | 200 mm dia. |
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| Substrate holder | Water-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 170° in 0.1° steps |
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| Ion beam sources | Sputter source: 120 mm circular RF source (RF120-e) Assist source: 120 mm circular RF source (RF120-e) or 350 mm circular RF source (RF350-e) or 218 mm circular microwave ECR source (MW218-e) |
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| Neutralizer | Filament driven (N-DC) or RF driven (N-RF) plasma bridge neutralizer |
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| Target holder | Target drum with tiltable and water-cooled targets, up to 5 (each max. 220 mm dia.) or up to 4 (each max. 300 mm dia.) |
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| Base pressure | < 1 x 10 -7 mbar |
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| System dimension (W x D x H) | 3.10 m x 1.70 m x 2.40 m, for single chamber with cassette handling (without electrical rack and pumps) |
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| Configurations | Single chamber with single substrate load lock or cassette handling, cluster system with cassette handling |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical deposition rates | Ag: 35 nm/min Al: 10 nm/min Si: 15 nm/min Ti: 8 nm/min Al 2 O 3 : 15 nm/min SiO 2 : 20 nm/min Ta 2 O 5 : 15 nm/min TiO 2 : 6 nm/min |
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| Uniformity variation | ≤ 0.5 % (σ/mean) |
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