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scia Coat 200

scia Coat 200

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

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scia Coat 200
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说明

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

Ion Beam Etching

Ion Beam Trimming

Ion Beam Sputtering

scia Cluster 200

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High Quality Multilayer Deposition

The scia Coat 200 has an excellent uniformity for coatings on up to 200 mm substrates. By using ion beam sputter deposition instead of other deposition processes, smooth and defect-free films can be achieved. In-situ optical monitoring ensures excellent process stability. Additionally, the system enables handling of wafer as well as arbitrary shaped substrates.

Features & Benefits

Excellent uniformity by substrate rotation and tilt

Up to 5 water-cooled target materials on a rotational holder for in-situ change

Recipe-controlled multilayer deposition with quartz crystal oscillator and/or optical thickness monitor (OTM) and test glass changer

Direct wafer handling or adaptation to variable substrate sizes with carrier handling

Equipped with a 350 mm ion beam source as assist source, also usable for ion beam etching processes

Need more Information? Contact us!

Single chamber with cassette handling

Single chamber with single substrate load lock

Applications

Transmittance and reflectivity diagram of a high-reflective mirror. Deposition of quarter-wave stack consisting of tantalum(V)-oxide and silicon dioxide for high-reflective mirror @ 630 nm. Reflectivity > 99.9 % and transmittance 15-20 ppm.

Optical coatings for high- and anti-reflective layers, bandpass and notch filters

Multilayer films for magnetic sensors (GMR, TMR, spintronics)

High laser damage threshold coatings

Deposition of dielectric and metal layers

In-situ preprocessing of substrates (etching, cleaning, smoothing)

Application Note

Dielectric Coatings on large substrates

High- and Anti-Reflective Coatings with Ta 2 O 5 and SiO 2

规格

型号scia Coat 200
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Ion Beam Sputtering
Substrate size (up to)200 mm dia.
Substrate holderWater-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 170° in 0.1° steps
Ion beam sourcesSputter source: 120 mm circular RF source (RF120-e) Assist source: 120 mm circular RF source (RF120-e) or 350 mm circular RF source (RF350-e) or 218 mm circular microwave ECR source (MW218-e)
NeutralizerFilament driven (N-DC) or RF driven (N-RF) plasma bridge neutralizer
Target holderTarget drum with tiltable and water-cooled targets, up to 5 (each max. 220 mm dia.) or up to 4 (each max. 300 mm dia.)
Base pressure< 1 x 10 -7 mbar
System dimension (W x D x H)3.10 m x 1.70 m x 2.40 m, for single chamber with cassette handling (without electrical rack and pumps)
ConfigurationsSingle chamber with single substrate load lock or cassette handling, cluster system with cassette handling
Software interfacesSECS II / GEM, OPC
Typical deposition ratesAg: 35 nm/min Al: 10 nm/min Si: 15 nm/min Ti: 8 nm/min Al 2 O 3 : 15 nm/min SiO 2 : 20 nm/min Ta 2 O 5 : 15 nm/min TiO 2 : 6 nm/min
Uniformity variation≤ 0.5 % (σ/mean)

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