scia Cube 300
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Ion Beam Etching
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Large Area Coating and Etching over 300 mm x 200 mm
The scia Cube 300 is designed for large area high-density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.
Features & Benefits
Large area processing with an array of synchronized linear microwave sources
Independent RF bias at substrate holder for energetic substrate bombardment
Substrate cooling (-10 °C) or heating (850 °C)
In-situ chamber cleaning process
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Applications
SEM image of grown synthesized boron doped diamond (BDD) layers with courtesy of STU Bratislava . Processing at very low temperature (390 °C). Growth rate of high-quality BDD up to 70 nm/h.
PECVD Processes Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …) Optical and scratch resistant coatings (a-C:H, DLC) Growing of nano-crystalline diamond and carbon nanotubes
Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …)
Optical and scratch resistant coatings (a-C:H, DLC)
Growing of nano-crystalline diamond and carbon nanotubes
RIE Processes Reactive etching and structuring of metals (Ni, Cr, Pt, …) Etching of gratings and other structures in optical materials (quartz, fused silica) Ashing of photoresist
Reactive etching and structuring of metals (Ni, Cr, Pt, …)
Etching of gratings and other structures in optical materials (quartz, fused silica)
Ashing of photoresist
Application Note
Deposition of DLC for glass compression molds
Principle
| 型号 | scia Cube 300 |
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| Product category | Pecvd Rie |
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| Substrate size (up to) | 300 mm x 200 mm |
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| Substrate holder | Water-cooled, RF bias |
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| Substrate temperature | Alternatively cryo-cooling down to -10 °C or heating up to 850 °C |
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| Plasma sources | 2 linear microwave sources (PL400) and/or RF parallel plate arrangement, 13.56 MHz |
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| 电源电压 | MW power: max. 9 kW, RF power: max. 0.6 kW |
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| Base pressure | < 1 x 10 -6 mbar |
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| System dimension (W x D x H) | 1.30 m x 1.90 m x 1.50 m (without electrical rack and pumps) |
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| Configurations | Single chamber, optional single substrate load lock |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical deposition rates | Diamond: 30 … 70 nm/h DLC: 7.5 nm/min |
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