scia Cube 750
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Large Area Coating and Etching over 750 mm x 750 mm
The scia Cube 750 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.
Features & Benefits
Large area processing with an array of synchronized linear microwave sources
Independent RF bias at substrate holder for energetic substrate bombardment
Substrate face-down orientation for minimized particle load
Substrate cooling (-10 °C)
In-situ chamber cleaning process
Full automation with vacuum load lock and atmosphere stocker system available
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Applications
SEM picture of structured computer generated hologram (CGH) on a quartz sample with courtesy of IMS Stuttgart.
PECVD Processes Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …) Optical and scratch resistant coatings (a-C:H, DLC)
Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …)
Optical and scratch resistant coatings (a-C:H, DLC)
RIE Processes Reactive etching and structuring of metals (Ni, Cr, Pt, …) Etching of gratings and other structures in optical materials (quartz, fused silica) Ashing of photoresist
Reactive etching and structuring of metals (Ni, Cr, Pt, …)
Etching of gratings and other structures in optical materials (quartz, fused silica)
Ashing of photoresist
Application Note
Deposition of DLC for glass compression molds
| 型号 | scia Cube 750 |
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| Product category |
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| Pecvd Rie |
| Substrate size (up to) | 750 mm x 750 mm |
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| Substrate holder | Water-cooled, RF bias |
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| Substrate temperature | Alternatively cryo-cooling down to -10 °C |
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| Plasma source | 7 linear microwave source (PL1300) and/or RF parallel plate arrangement, 13.56 MHz |
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| 电源电压 | MW power: max. 48 kW, RF power: max. 3 kW |
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| Base pressure | < 1 x 10 -6 mbar |
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| System dimension (W x D x H) | 3.70 m x 2.50 m x 2.00 m (without electrical rack and pumps) |
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| Configurations | Single chamber with single substrate load lock, optional atmospheric loading system with substrate stocking |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical etch rates | Metals: > 5 nm/min SiO 2 : > 30 nm/min |
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