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scia Cube 750

scia Cube 750

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品牌: scia Systems价格: 面议服务区域: 全国

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scia Cube 750
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说明

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

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Large Area Coating and Etching over 750 mm x 750 mm

The scia Cube 750 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.

Features & Benefits

Large area processing with an array of synchronized linear microwave sources

Independent RF bias at substrate holder for energetic substrate bombardment

Substrate face-down orientation for minimized particle load

Substrate cooling (-10 °C)

In-situ chamber cleaning process

Full automation with vacuum load lock and atmosphere stocker system available

Need more Information? Contact us!

Applications

SEM picture of structured computer generated hologram (CGH) on a quartz sample with courtesy of IMS Stuttgart.

PECVD Processes Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …) Optical and scratch resistant coatings (a-C:H, DLC)

Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO 2 , Si 3 N 4 , …)

Optical and scratch resistant coatings (a-C:H, DLC)

RIE Processes Reactive etching and structuring of metals (Ni, Cr, Pt, …) Etching of gratings and other structures in optical materials (quartz, fused silica) Ashing of photoresist

Reactive etching and structuring of metals (Ni, Cr, Pt, …)

Etching of gratings and other structures in optical materials (quartz, fused silica)

Ashing of photoresist

Application Note

Deposition of DLC for glass compression molds

规格

型号scia Cube 750
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Pecvd Rie
Substrate size (up to)750 mm x 750 mm
Substrate holderWater-cooled, RF bias
Substrate temperatureAlternatively cryo-cooling down to -10 °C
Plasma source7 linear microwave source (PL1300) and/or RF parallel plate arrangement, 13.56 MHz
电源电压MW power: max. 48 kW, RF power: max. 3 kW
Base pressure< 1 x 10 -6 mbar
System dimension (W x D x H)3.70 m x 2.50 m x 2.00 m (without electrical rack and pumps)
ConfigurationsSingle chamber with single substrate load lock, optional atmospheric loading system with substrate stocking
Software interfacesSECS II / GEM, OPC
Typical etch ratesMetals: > 5 nm/min SiO 2 : > 30 nm/min

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