scia Inline 400
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Ultra-Sharp Edges for Blades
The scia Inline 400 was designed for shaping the edges of high-quality blades - using ion beam etching and magnetron sputtering . The basic configuration of the system consists of two process units: The first one is equipped with an ion beam source for deburring and pre-cleaning of the blades. In the second process chamber opposite magnetron sputter sources are installed to coat both sides of the substrates simultaneously. The inline concept with two load locks enables a fast loading and unloading procedure, which results in a very high throughput. Furthermore, the modular design allows easy upgrading with additional process chambers as well as integration into existing production lines.
Features & Benefits
Deburring station for ultra-sharp substrate edges
Carrier-based handling to address various substrate dimensions
Vertical layout enables double-sided processing for extreme high throughput in volume production
Inline arrangement with multiple process chambers and roller track transport system
Two load-locks for fast loading and unloading procedure, thus increased throughput
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Applications
Tip shaping of cutter blades realized by ion beam etching. Left: Unsharpened blade with strong burr, Right: Optimized blade with smoothed
surface for better coating adhesion.
Tip shaping of razor blades, microtome blades or sharp medical tools (syringes) for a durable coating adhesion
Coating of adhesive and/or functional layers on razor blades and microtome blades
Principle
Inline arrangement with linear substrate movement
Chamber one with ion beam sources for pre-cleaning
Chamber two with magnetrons for double-sided coating of the substrates
Ion Beam Etching (IBE) / Ion Beam Milling (IBM) uses a collimated beam of inert gas ions for material removal.
Magnetron Sputtering utilizes plasma ion bombardment on a target to deposit thin films on the substrate surface.
Detailled Information
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| 型号 | scia Inline 400 |
|---|---|
| Product category | Customized Systems |
| Substrate size (up to) | Individual sizes loaded on carrier, carrier size up to 450 mm x 400 mm |
| Ion beam source | Two 380 mm linear microwave ECR sources (LIN380-e) |
| Sputter source | Two rotatable magnetrons with 680 mm length |
| Throughput | 12 Carrier/h ≈ up to 500,000 blades/h |
| Base pressure | < 1 x 10 -6 mbar |
| System dimension (W x D x H) | 6.10 m x 1.60 m x 1.95 m, for 2 process chambers (without electrical rack) |
| Configurations | Inline system with several etching and coating chambers, roller track transport system, 2 load locks and 2 atmospheric stations for loading and unloading |
| Software interfaces | SECS II / GEM, OPC |
| Typical deposition rate | SiO 2 : 85 nm x mm/s (dynamic rate) |
| Uniformity variation | ≤ 10 % (σ/mean) |