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scia Magna 200

scia Magna 200

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

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scia Magna 200
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Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

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scia Cluster 200

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Advanced Wafer Coatings

The scia Magna 200 is used for precision wafer coatings by deposition of metals and/or dielectric layers. With its selectable sputter modes and arrangements the system can be configured according the customer requirements. In addition, the system is suitable for small scale R&D applications as well as for mass production, in cluster layout with software controlled automatic production.

Features & Benefits

RF bias for conformity and stress control

Superior uniformity with rotatable substrate holder

Low substrate temperature with helium cooling contact and electrostatic chuck

High deposition rates with reactive sputtering in unipolar and bipolar mode

Variation of film properties by adjustable energetic substrate bombardment

Co-sputtering with confocal arrangement of magnetrons

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Cluster layout with 2 process chambers and cassette handling

Single chamber with single substrate load lock

Applications

Reactive sputter deposition of silicon dioxide in confocal arrangement with bipolar pulsed DC on a 150 mm dia. Si wafer. Uniformity variation < 0.8 % (σ/mean), stress -300 MPa,

deposition rate 7 nm/min. Refractive index of 1.48 indicates stoichiometric and dense silicon dioxide deposition.

Temperature compensation films for TC-SAW devices (SiO 2 )

Piezoelectric films with excellent and defined crystal orientation (AlN, AlScN) and electrode materials (Mo)

Optical high- and low- refractive coatings (SiO 2 , TiO 2 , HfO 2 , ZrO 2 , Nb 2 O 5 , Ta 2 O 5 )

Electrical insulating films (Si 3 N 4 , SiO 2 , Al 2 O 3 )

Co-sputtering of metals and alloys

Application Note

规格

型号scia Magna 200
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Magnetron Sputtering
Substrate size (up to)200 mm dia.
Substrate holderWater-cooled, helium backside cooling contact, rotation up to 20 rpm, optional RF bias, electrostatic clamping and wafer heating (up to 1000 °C)
Sputter sourcesMagnetron with rotating magnetic field or up to 4 magnetrons in confocal arrangement or Double Ring Magnetron (DRM 400) from Fraunhofer FEP
Sputter modesDC in uni- or bipolar pulse mode (up to 2 x 10 kW) and/or RF (up to 6 kW, 13.56 MHz)
Base pressure< 1 x 10 -6 mbar
System dimensions (W x D x H)2.70 m x 1.10 m x 1.60 m, for single chamber with cassette handling (without electrical rack and pumps)
Con fi gurationsSingle chamber with single substrate load lock or cassette handling, Cluster system with up to 5 process chambers and cassette handling
Software interfacesSECS II / GEM, OPC
Typical deposition rates SiO 290 nm/min (single) 7 nm/min (confocal) 180 nm/min (DRM 400)
Uniformity variation (σ/mean)≤ 1.5 % (single) ≤ 0.8 % (confocal) ≤ 0.5 % (DRM 400)

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