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scia Mill 150

scia Mill 150

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

品牌: scia Systems价格: 面议服务区域: 全国

广西科米瑞实验仪器设备有限公司提供 scia Systems scia Mill 150 产品资料、选型咨询、供货报价和售后服务支持,价格面议。

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scia Mill 150
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说明

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

Ion Beam Etching

Ion Beam Trimming

Ion Beam Sputtering

scia Cluster 200

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Full Surface Ion Beam Etching on 150 mm Substrates

The scia Mill 150 is designed for structuring of complex multilayers of various materials. With its fully reactive gas compatibility the system also enables reactive etching processes with enhanced selectivity and rate. Due to its space saving design the scia Mill 150 is ideal for small scale production and R&D applications.

Features & Benefits

Etching angle adjustment with tiltable and rotatable substrate holder

Excellent uniformity without shaper

Enhanced selectivity and rate with reactive gases

Process control with exact SIMS based or optical end point detection

Carrier concept for adaptation to variable substrate sizes

Processing of wafers with photoresist masks due to good wafer cooling

Need more Information? Contact us!

Single chamber with single substrate load lock

Single chamber with load lock, SIMS and heating jacket for reactive processes

Installation through clean room wall

Applications

SEM pictures of etching edge with courtesy of DIAS Infrared GmbH.

Etching of 15 µm lithium tantalate with photoresist and 15° angle of incidence for a pyroelectric sensor.

Left: Standard photoresist mask with sharp edges.

Right: Optimized photoresist with smooth edges improves electrical bonding of the sensor.

Structuring of magnetic memory (MRAM) and sensors (GMR, TMR, etc.)

Structuring of metals (Au, Ru, Ta, …), piezoelectric, and dielectric materials (PZT, KNN, AlScN, InP, Cu, Pt, Au, ...), e.g., for MEMS production

Delayering of multilayer structures for failure analysis

规格

型号scia Mill 150
Product categoryIon Beam Etching
Substrate size (up to)

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150 mm dia.
Substrate holderWater-cooled, helium backside cooling contact, substrate rotation 1 to 20 rpm, tiltable in-situ from 0° to 165° in 0.1° steps
Ion beam source190 mm circular microwave ECR source (MW218-e)
NeutralizerTriple plasma bridge neutralizer (N-3DC) RF plasma bridge neutralizer (RF-PBN)
Base pressure< 5 x 10 -7 mbar
System dimension (W x D x H)1.90 m x 1.80 m x 1.75 m (without electrical rack)
ConfigurationsSingle chamber, optional single substrate load lock, optional OES or SIMS based end point detection
Software interfacesSECS II / GEM, OPC
Typical removal rateSiO 2 : 30 nm/min
Uniformity variation≤ 3 % (σ/mean)

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