scia Mill 200
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Full Surface Ion Beam Etching on 200 mm Wafers
The scia Mill 200 is designed for structuring of complex multilayers of various materials. For an exact process control different end point detection systems can be equipped. With its fully reactive gas compatibility the system enables reactive etching processes with enhanced selectivity and rate. The flexible design of the scia Mill 200 allows to adapt it as single substrate version as well as in high volume production cluster layout with up to three process chambers and two cassette load locks.
Features & Benefits
Etching angle adjustment with tiltable and rotatable substrate holder
Excellent uniformity without shaper
Enhanced selectivity and rate with reactive gases
Process control with exact SIMS based or optical end point detection
Processing of wafers with photoresist masks due to good wafer cooling
Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication
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Cluster layout with 3 process chambers and cassette handling
Cluster layout with 2 process chambers and cassette handling
Single chamber with single substrate load lock
Single chamber with cassette handling
Applications
Etching of a layer stack for a spintronic sensor using SIMS spectrometry, allows to determine the layer change boundaries, thereby changing points for angle and etch stops can precisely be defined. Left: Layer stack. Right: SIMS material detection.
Structuring of magnetic memory (MRAM) and sensors (GMR, TMR, etc.)
Structuring of metals (Au, Ru, Ta, …), piezoelectric, and dielectric materials (PZT, KNN, AlScN, InP, Cu, Pt, Au, ...), e.g., for MEMS production
Delayering of multilayer structures for failure analysis
Patterning of waveguides (LiNbO 3 , BTO, …) for Photonic Integrated Circuits (PIC)
Production of slanted surface relief gratings (SRG) for Augmented Reality
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| 型号 | scia Mill 200 |
|---|---|
| Product category | Ion Beam Etching |
| Substrate size (up to) | 200 mm dia. |
| Substrate holder | Water-cooled, helium backside cooling contact, substrate rotation 1 to 20 rpm, tiltable in-situ from 0° to 170° in 0.1° steps |
| Ion beam source | 350 mm circular RF source (RF350-e) |
| Neutralizer | RF plasma bridge neutralizer (N-RF) |
| Throughput | 12 Wafer/h (100 nm SiO 2 on 200 mm wafer) |
| Base pressure | < 5 x 10 -7 mbar |
| System dimension (W x D x H) | 3.20 m x 2.50 m x 2.50 m, for 3 chambers and cassette handling (without electrical racks and pumps) |
| Configurations | Single chamber, optional single substrate load lock or cassette handling, cluster system with up to 3 process chambers and cassette handling, optional OES or SIMS based end point detection |
| Software interfaces | SECS II / GEM, OPC |
| Typical removal rates | Cu: 60 nm/min, Pt: 35 nm/min, W: 18 nm/min, SiO 2 : 20 nm/min (inert), SiO 2 : 40 - 60 nm/min (reactive) |
| Uniformity variation | ≤ 1 % (σ/mean) |