scia Mill 300
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Structuring of Complex Multilayers on 300 mm Wafers
The scia Mill 300 is designed for ion beam etching of various substrate materials with up to 300 mm dia. Different end point detection systems allow accurate process control, and the system's full reactive gas compatibility enables reactive etch processes with improved selectivity and rate. Due to the flexible design of the scia Mill 300, the system can be used both for high-volume production with cassette loading as well as for small scale production with a single substrate load-lock.
Features & Benefits
Etching angle adjustment with tiltable and rotatable substrate holder
Excellent uniformity without shaper
Enhanced selectivity and rate with reactive gases
Process control with exact SIMS based or optical end point detection
Processing of wafers with photoresist masks due to good wafer cooling
Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication
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Applications
Reactive ion beam etching of slanted surface relief gratings (SRG) as optical couplers for Augmented Reality (AR). Left: Ion beam etching under different angles of incidence. Right: Etched quartz grating from principle and SEM result.
Structuring of magnetic memory (MRAM) and sensors (GMR, TMR, etc.)
Structuring of metals (Au, Ru, Ta, …), piezoelectric, and dielectric materials (PZT, KNN, AlScN, InP, Cu, Pt, Au, ...), e.g., for MEMS production
Delayering of multilayer structures for failure analysis
Patterning of waveguides (LiNbO 3 , BTO, …) for Photonic Integrated Circuits (PIC)
Production of slanted surface relief gratings (SRG) for Augmented Reality
Chemically Assisted Ion Beam Etching (CAIBE) of compound semiconductors (GaAs, GaN, InP, …)
Ion beam smoothing for reduction of microroughness
Surface Relief Gratings for AR- and MR-Devices
Magnetic Multilayers for tunnel-magneto-resistance (TMR) sensors
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