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scia Trim 200

scia Trim 200

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

品牌: scia Systems价格: 面议服务区域: 全国

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scia Trim 200
说明规格FAQ

说明

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

Ion Beam Etching

Ion Beam Trimming

Ion Beam Sputtering

scia Cluster 200

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Precise Surface Correction

The scia Trim 200 is used for high precision surface trimming of wafers, without limitations in film and wafer materials. Designed for high-volume production the system has a throughput and maintenance optimized layout with a semiconductor cassette handling robot that accommodates all standard wafer sizes. In addition, a cluster configuration with two process chambers and two cassette load locks is available.

Features & Benefits

Significant yield improvement

Film thickness homogeneity to be adjusted down to atom level of 0.1 nm

No edge exclusion with electrostatic chuck

Sub-nanometer removal with zero base etch function

Processing of film and wafer materials without restrictions

Throughput and maintenance optimized design for low production costs

Processing of wafers with photoresist masks due to good wafer cooling

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Single chamber with cassette handling

Single chamber with cassette handling and 2 cassette load locks

Cluster layout with 2 process chambers and cassette handling

Single chamber with single substrate load lock

Applications

Results (left-pre, right-post) for ion beam trimming of aluminum oxide on a 200 mm wafer. Standard deviation: pre: 9.4 nm, post: 0.4 nm; Improvement factor: 23.5; Average thickness: pre: 382.3 nm, post: 360.1 nm; Target: 360 nm

Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters

Film thickness trimming of silicon on insulator (SOI) and piezo material (LT, LN) wafers

Dimensional correction of waveguides for photonic integrated circuits (PIC)

Film thickness error or step height correction in thin film head (TFH) manufacturing

规格

型号scia Trim 200

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Product category
Ion Beam Trimming
Substrate size (up to)200 mm dia., all standard wafer sizes possible
Substrate holderWater-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion
Axes performanceMax. velocity 0.5 m/s, max. acceleration 15 m/s²
Ion beam source37 mm circular RF source (RF37-i) with 8 ...15 mm (FWHM) or 80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM)
NeutralizerHot filament neutralizer (N-Fil) or RF plasma bridge neutralizer (N-RF)
Throughput15 Wafer/h (50 nm Si on 150 mm wafer)
Base pressure< 1 x 10 -6 mbar
System dimensions (W x D x H)2.80 m x 1.40 m x 2.20 m, for single chamber with cassette handling (without electrical rack and pumps)
Con fi gurationsSingle chamber with single substrate load lock or cassette handling, Cluster system with 2 process chambers and cassette handling
Software interfacesSECS II / GEM, OPC
Typical removal rateSiO 2 : 6 x 10 -3 mm 3 /s (RF37-i), 11 x 10 -3 mm 3 /s (RF80-i)
Film variation after trimming< 0.5 nm RMS (dependent on input quality)

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