scia Trim 200
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Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...
Ion Beam Etching
Ion Beam Trimming
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scia Cluster 200
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Precise Surface Correction
The scia Trim 200 is used for high precision surface trimming of wafers, without limitations in film and wafer materials. Designed for high-volume production the system has a throughput and maintenance optimized layout with a semiconductor cassette handling robot that accommodates all standard wafer sizes. In addition, a cluster configuration with two process chambers and two cassette load locks is available.
Features & Benefits
Significant yield improvement
Film thickness homogeneity to be adjusted down to atom level of 0.1 nm
No edge exclusion with electrostatic chuck
Sub-nanometer removal with zero base etch function
Processing of film and wafer materials without restrictions
Throughput and maintenance optimized design for low production costs
Processing of wafers with photoresist masks due to good wafer cooling
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Single chamber with cassette handling
Single chamber with cassette handling and 2 cassette load locks
Cluster layout with 2 process chambers and cassette handling
Single chamber with single substrate load lock
Applications
Results (left-pre, right-post) for ion beam trimming of aluminum oxide on a 200 mm wafer. Standard deviation: pre: 9.4 nm, post: 0.4 nm; Improvement factor: 23.5; Average thickness: pre: 382.3 nm, post: 360.1 nm; Target: 360 nm
Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
Film thickness trimming of silicon on insulator (SOI) and piezo material (LT, LN) wafers
Dimensional correction of waveguides for photonic integrated circuits (PIC)
Film thickness error or step height correction in thin film head (TFH) manufacturing
| 型号 | scia Trim 200 |
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| Product category |
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| Ion Beam Trimming |
| Substrate size (up to) | 200 mm dia., all standard wafer sizes possible |
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| Substrate holder | Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion |
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| Axes performance | Max. velocity 0.5 m/s, max. acceleration 15 m/s² |
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| Ion beam source | 37 mm circular RF source (RF37-i) with 8 ...15 mm (FWHM) or 80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM) |
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| Neutralizer | Hot filament neutralizer (N-Fil) or RF plasma bridge neutralizer (N-RF) |
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| Throughput | 15 Wafer/h (50 nm Si on 150 mm wafer) |
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| Base pressure | < 1 x 10 -6 mbar |
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| System dimensions (W x D x H) | 2.80 m x 1.40 m x 2.20 m, for single chamber with cassette handling (without electrical rack and pumps) |
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| Con fi gurations | Single chamber with single substrate load lock or cassette handling, Cluster system with 2 process chambers and cassette handling |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical removal rate | SiO 2 : 6 x 10 -3 mm 3 /s (RF37-i), 11 x 10 -3 mm 3 /s (RF80-i) |
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| Film variation after trimming | < 0.5 nm RMS (dependent on input quality) |
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