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scia Trim 300

scia Trim 300

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

品牌: scia Systems价格: 面议服务区域: 全国

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scia Trim 300
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说明

Products Ion Beam Etching Ion Beam Trimming Ion Beam Sputtering scia Cluster 200 more...

Ion Beam Etching

Ion Beam Trimming

Ion Beam Sputtering

scia Cluster 200

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Precise Surface Correction by Ion Beam Trimming

The scia Trim 300 is a high-volume production system for ion beam trimming of 300 mm wafers without material restrictions. The precise local surface correction of the substrate is performed by a focused broad ion beam with a sufficient small focal point. Controlling the local material removal results in the etching of inhomogeneities up to an impressively uniform film, thus significantly increasing the yield of usable components.

Features & Benefits

Significant yield improvement

Film thickness uniformity to be adjusted down to atom level of 0.1 nm

No edge exclusion with electrostatic chuck

Sub-nanometer removal with zero base etch function

Processing of film and wafer materials without restrictions

Throughput and maintenance optimized design for low production costs

Processing of wafers with photoresist masks due to good wafer cooling

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Applications

Results IBT

Results (left-pre, right-post) for ion beam trimming of SiO 2 on a 300 mm wafer. Standard deviation: pre: 1.3 nm, post: 0.3 nm; Improvement factor: 4.3; Average thickness: pre: 1010.7 nm, post: 955.1 nm; Removal: 55.6 nm

Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters

Film thickness trimming of silicon on insulator (SOI) and piezo material (LT, LN) wafers

Dimensional correction of waveguides for photonic integrated circuits (PIC)

Structuring of slanted surface relief gratings (SRG) on master stamps for imprint technologies

Dimensional correction of MEMS structures

Form error correction for X-ray mirrors

Thickness Trimming for PIC (Photonic Integrated Circuit) Wafers

规格

型号scia Trim 300
Product category

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Ion Beam Trimming
Substrate size (up to)300 mm dia., all standard wafer sizes possible
Substrate holderWater-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion
Axes performanceMax. velocity 0.25 m/s, max. acceleration 15 m/s²
Ion beam source37 mm circular RF source (RF37-i) with 8 ...15 mm (FWHM) or 80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM)
NeutralizerHot filament neutralizer (N-Fil)
Throughput6 Wafer/h (50 nm Si on 300 mm wafer)
Base pressure< 1 x 10 -6 mbar
System dimensions (W x D x H)3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps)
ConfigurationsSingle chamber with cassette handling or cluster system with two process chambers and cassette handling
Software interfacesSECS II / GEM, OPC
Typical removal rateSiO 2 : 6 x 10 -3 mm 3 /s (RF37-i), 17 x 10 -3 mm 3 /s (RF80-i)
Film variation after trimming< 0.5 nm RMS (dependent on input quality)

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