ALD-150LX™ Plasma ALD Designed for Advanced Research & Development Applications

：The ALD-150LX™ features Kurt J. Lesker Company ® (KJLC ® ) innovative design features including our Patented Precursor Focusing Technique™ (PFT) and our Patent Pending Ultrahigh Purity (UHP) process capability. The Plasma Enhanced Atomic Layer Deposition (ALD) system is designed specifically for advanced research and development (R&D) applications. With an emphasis on enabling and supporting innovative, cutting-edge technology at the R&D level, the ALD-150LX serves not only as a stand-alone platform, but provides connectivity with additional process and analysis modules in a cluster tool configuration.

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：Ultra High Purity Conditions Enable Pure Nitride and Elemental Films

：FESEM images of ScN showing (a) top- and (b) cross-sectional views of the polycrystalline, cubic phase ScN film deposited on Si (100). (c) ScN-coated trenches with a 4:1 aspect ratio imaged by FESEM.

：ALD-150LX Specifications

：Specification

：Substrate Size

：Up to 150mm

：Substrate Loading

：Manual, Single substrate loadlock, Multi-substrate loadlock, Cluster

：Substrate Temperature

：Up to 600°C

：Delivery Line and Chamber Temperature

：Up to 250°C

：ALD Process Modes

：Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)

：Ellipsometry Ports

：Standard on chamber

：Precursor Inlets to Chamber

：Four (4), standard on chamber, independently heated

：Precursor Types