RIE Plasma
反应离子刻蚀。Up to �300 mm (�12")。The RIE-300NR is an ideal reactive ion etching system for processing of ø300 mm wafer and multiple wafers (ø3" x 12, ø4" x 8, etc.) with excelle
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ø300 mm RIE Plasma Etching System RIE-300NR
ø300 mm RIE Plasma Etching System RIE-300NRUp to �300 mm (�12")
The RIE-300NR is an ideal reactive ion etching system for processing of ø300 mm wafer and multiple wafers (ø3" x 12, ø4" x 8, etc.) with excellent uniformity. This system is designed to minimize factory space requirements, enhance throughput, maximize uptime, and reduce the cost of ownership through reliable hardware and ease of service.
主要特点和优点
Processing up to ø350 mm (ø3" x 12, ø4" x 8, ø12" x 1)
User-friendly touch screen interface
Fully automatic “one-button” operation with full manual override
An optimized shower head to deliver process gas uniformity
A close coupled gas delivery box which reduces the residence time
A symmetrical evacuation design coupled to a TMP creates an efficient flow
Automatic pressure control that allows for precise control of process pressure independent of gas flow
Dry pump and system layout allow for ease of maintenance
Removal of interlayer films for failure analysis of ø300 mm
Etching of Si, SiO2, SiN and Poly-Si
Etching of resins and desmear
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