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EpiStride SiC CVD System

EpiStride

Introducing the EpiStride System for Silicon Carbide: A New Stride in SiC Epitaxy

品牌: Veeco价格: 面议服务区域: 全国

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VeecoEpiStride产品资料

:Introducing the EpiStride System for Silicon Carbide: A New Stride in SiC Epitaxy

:Veeco’s latest technology for the compound semiconductor market enables high-performance chemical vapor deposition of Silicon Carbide for both 6 and 8-inch wafer production. The platform enables a return to production in under 5 hours after routine cleaning maintenance. The EpiStride system’s high uptimes, short cycle times and overall stable performance lead to the lowest cost of ownership per wafer compared to competitive systems.

:Features and Benefits

:Single-wafer, cross-flow, hot-wall chemical vapor deposition (CVD) system for Silicon Carbide epitaxy

:Capable of processing wafers of any size up to 200 mm

:Available in single- or dual-chamber configurations

:Ensuring the Highest Epitaxial Quality

:The EpiStride system can grow epi layers of standard 10-15 um thickness with thickness uniformities well below 1% and doping uniformities below 2%

:This performance is achieved repeatably throughout a campaign cycle in-between routine cleaning and maintenance operations

:Providing Unmatched Ease-of-Use

:Only system to complete routine cleaning maintenance in < 5 hours (green-to-green time), out of which human-touch-time is < 1 hour

:Routine cleaning maintenance is performed in an inert environment through a glovebox with easy access to the reactor

:The glovebox allows for a quick exchange of parts without complex and time-consuming disconnection of hardware components

:Upon maintenance completion, the EpiStride system quickly achieves baseline performance with no need for further hardware or software tuning

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