SIRD SiC 200
Scanning InfraRed Depolarization。Features at a glance。Stress Measurement Quantitative stress measurement on wafer level
广西科米瑞实验仪器设备有限公司生产销售 PVA TePla SIRD SiC 200,可提供产品参数、报价和售后服务咨询,价格面议。
← 返回产品列表
Wafer Inspection
Scanning InfraRed Depolarization
Features at a glance
Stress Measurement Quantitative stress measurement on wafer level
Wide doping ranges Doping levels with resistivities down to 5.1 mOhm cm possible
Automation Full automation with recipe based measurement and analysis. SECS/GEM and OHT ready.
Different semiconductor materials Silicon Carbide, Gallium Nitride, Silicon, Gallium Arsenide, Indium, Phosphide, Aluminum Nitride etc.
Download product flyer
Interested in SIRD SiC 200
请填写必填信息,我们将在工作日尽快回复。