SIRD SiC 200
Scanning InfraRed Depolarization。Features at a glance。Stress Measurement Quantitative stress measurement on wafer level
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Wafer Inspection
Scanning InfraRed Depolarization
Features at a glance
Stress Measurement Quantitative stress measurement on wafer level
Wide doping ranges Doping levels with resistivities down to 5.1 mOhm cm possible
Automation Full automation with recipe based measurement and analysis. SECS/GEM and OHT ready.
Different semiconductor materials Silicon Carbide, Gallium Nitride, Silicon, Gallium Arsenide, Indium, Phosphide, Aluminum Nitride etc.
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Interested in SIRD SiC 200
| Model / product family | SIRD SiC 200 |
|---|---|
| 产品类别 | Wafer Inspection / Scanning Infrared Depolarization |
| Principle | Stress-induced optical birefringence |
| Stress Sensitivity | ≥ 0.1 kPa in-plane shear stress |
| Lateral Resolution | ≈ 40 μm |
| Throughput | Up to 15 wafers per hour (wph) |
| Wafer Handling | Manual or automated wafer handling |
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