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SIRD SiC 200

SIRD SiC 200

Scanning InfraRed Depolarization。Features at a glance。Stress Measurement Quantitative stress measurement on wafer level

品牌: PVA TePla价格: 面议服务区域: 全国

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SIRD SiC 200
说明规格FAQ

说明

Wafer Inspection

Scanning InfraRed Depolarization

Features at a glance

Stress Measurement Quantitative stress measurement on wafer level

Wide doping ranges Doping levels with resistivities down to 5.1 mOhm cm possible

Automation Full automation with recipe based measurement and analysis. SECS/GEM and OHT ready.

Different semiconductor materials Silicon Carbide, Gallium Nitride, Silicon, Gallium Arsenide, Indium, Phosphide, Aluminum Nitride etc.

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Interested in SIRD SiC 200

规格

Model / product familySIRD SiC 200
产品类别Wafer Inspection / Scanning Infrared Depolarization
PrincipleStress-induced optical birefringence
Stress Sensitivity≥ 0.1 kPa in-plane shear stress
Lateral Resolution≈ 40 μm
ThroughputUp to 15 wafers per hour (wph)
Wafer HandlingManual or automated wafer handling

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