
SIRD SiC 200
Scanning InfraRed Depolarization。Features at a glance。Stress Measurement Quantitative stress measurement on wafer level
- Model / product family
- SIRD SiC 200
- 产品类别
- Wafer Inspection / Scanning Infrared Depolarization
- Principle
- Stress-induced optical birefringence
- Stress Sensitivity
- ≥ 0.1 kPa in-plane shear stress
